SiSH407DN Description
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.
SiSH407DN Key Features
- TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package
- 100 % Rg and UIS tested
SiSH407DN is P-Channel MOSFET manufactured by Vishay .
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.