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SiSS05DN - P-Channel MOSFET

Key Features

  • TrenchFET® Gen IV p-channel power MOSFET.
  • Provides exceptionally low RDS(on) in a compact package that is thermally enhanced.
  • Enables higher power density.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS05DN
Manufacturer Vishay
File Size 193.80 KB
Description P-Channel MOSFET
Datasheet download datasheet SiSS05DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiSS05DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration 1 4 3 S 2 S S G Bottom View -30 0.0035 0.0058 37 -108 Single FEATURES • TrenchFET® Gen IV p-channel power MOSFET • Provides exceptionally low RDS(on) in a compact package that is thermally enhanced • Enables higher power density • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.