SiZ342BDT - Dual N-Channel MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
High side and low side MOSFETs form optimized combination for 50 % duty cycle.
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiZ342BDT dual n-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiZ342BDT
Manufacturer	Vishay
File Size	180.40 KB
Description	Dual N-Channel MOSFET
Datasheet	SiZ342BDT Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SIZ300DT	Dual N-Channel MOSFET	Vishay Siliconix
SIZ700DT	N-Channel MOSFET	Vishay Siliconix
SIZE144C	SMALL PUSH PULL SOLENOID	SHINDENGEN

Other Datasheets by Vishay

Part Number	Description
SiZ342DDT	Dual N-Channel MOSFET
SIZ342DT	N-Channel MOSFET
SiZ340DDT	Dual N-Channel MOSFET
SIZ340DT	N-Channel MOSFET
SiZ320DT	Dual N-Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com SiZ342BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 30 0.00965 0.0145 4 32.9 a Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • TrenchFET® Gen IV power MOSFET • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.