* TrenchFET® Gen IV power MOSFET
* High side and low side MOSFETs form optimized combination for 50 % duty cycle
* Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
* 100 % Rg and UIS tested
* Material categorization: for de
SiZ342BDT Datasheet (180.40 KB)
SiZ342BDT
180.40 KB
Dual n-channel mosfet.
www.vishay.com SiZ342BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm To.
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