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Vishay Intertechnology Electronic Components Datasheet

SiZ710DT Datasheet

N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFETs
SiZ710DT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0068 at VGS = 10 V
Channel-1 20
0.0090 at VGS = 4.5 V
Channel-2 20 0.0033 at VGS = 10 V
0.0043 at VGS = 4.5 V
ID (A)
16a
16a
35a
35a
Qg (Typ.)
6.9 nC
18.2 nC
PowerPAIR® 6 x 3.7
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
Pin 1
G1 3.73 mm
1 D1
2
D1
D1
3
G2
6 S2
5
S1/D2
(Pin 7)
S2
4
6 mm
Ordering Information:
SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
16a
16a
16a, b, c
15b, c
70
16a
3.2b, c
20
± 20
35a
35a
30b, c
24b, c
100
35a
3.8b, c
30
20 45
27 48
17 31
3.9b, c
4.6b, c
2.5b, c
3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
24 32 20 27
3.5 4.6 2 2.6
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 65733
www.vishay.com
S11-2379-Rev. B, 28-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiZ710DT Datasheet

N-Channel 20 V (D-S) MOSFET

No Preview Available !

SiZ710DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
ID = 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 250 µA
Gate Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 19 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 16.5 A
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 19 A
VDS = 10 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Channel-1
VDS = 10 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 10 V, ID = 19 A
Qg VDS = 10 V, VGS = 10 V, ID = 20 A
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 16.8 A
Qgs
Channel-2
Qgd VDS = 10 V, VGS = 4.5 V, ID = 20 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
V
20
19
20
- 4.8
mV/°C
- 5.3
1 2.2
V
1 2.2
± 100
± 100
nA
1
1
µA
5
5
15
A
20
0.0055 0.0068
0.0027 0.0033
0.0072 0.0090
0.0034 0.0043
45
S
85
Ch-1
820
Ch-2
2310
Ch-1
290
Ch-2
730
Ch-1
115
Ch-2
305
Ch-1
11.5 18
Ch-2
38 60
Ch-1
6.9 11
Ch-2
18.2 28
Ch-1
2.4
Ch-2
6.6
Ch-1
1.7
Ch-2
4.8
Ch-1 0.3 1.3 2.6
Ch-2 0.2 0.8 1.6
pF
nC
www.vishay.com
Document Number: 65733
2 S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiZ710DT
Description N-Channel 20 V (D-S) MOSFET
Maker Vishay
Total Page 14 Pages
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