TCET1108G Datasheet | Vishay

DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS - UL 1577 - c UL 1577 - DIN EN 60747-5-5 (VDE 0884-5) - BSI: EN 62368-1:2014 - CQC GB4943.1-2011 - CQC GB8898-2011 FEATURES - High mon mode rejection - Low temperature coefficient of CTR - CTR offered in 7 groups - Reinforced isolation provides circuit protection against electrical shock (safety class II) - Isolation materials according to UL 94 V-0 - Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664) - Climatic classification 55 / 100 / 21 (IEC 60068 part 1) - Rated impulse voltage (transient overvoltage) VIOTM = 6 k Vpeak - Isolation test voltage (partial discharge test voltage) Vpd = 1.6 k V - Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS - Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak - Creepage current resistance according to VDE 0303 / IEC 60112 parative tracking index: CTI ≥ 175 - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - For application class I to IV at mains voltage ≤ 300 V - For application class I to III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for: - Switch-mode power supplies - Line receiver - puter peripheral interface - Microprocessor system interface ORDERING INFORMATION # # PART NUMBER LEAD...