TCET1113 Datasheet | Vishay

DESCRIPTION The TCET111., TCET111.G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. APPLICATIONS Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I to IV at mains voltage  300 V - for appl. class I to III at mains voltage  600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for: - Switch-mode power supplies - Line receiver - puter peripheral interface - Microprocessor system interface FEATURES - CTR offered in 9 groups - Isolation materials according to UL 94 V-0 - Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664) - Climatic classification 55 / 100 / 21 (IEC 60068 part 1) - Special construction: therefore, extra low coupling capacity of typical 0.2 p F, high mon mode rejection - Low temperature coefficient of CTR - Temperature range -40 °C to +110 °C - Rated impulse voltage (transient overvoltage) VIOTM = 6 k Vpeak - Isolation test voltage (partial discharge test voltage) Vpd = 1.6 k V - Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS - Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak - Creepage current resistance according to VDE 0303/ IEC 60112 parative tracking index: CTI  175 - Thickness through insulation  4 mm - External creepage distance > 8 mm - Material categorization: for definitions of pliance please see .vishay./doc?99912 AGENCY APPROVALS - UL - c UL - DIN EN 60747-5-5 (VDE 0884) - BSI: EN 62368-1:2014  ORDERING...