TCET1600G Datasheet | Vishay

DESCRIPTION The TCET1600, TCET1600G consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a single (4 pin) package. FEATURES - Isolation materials according to UL 94 V-0 - Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664) - Climatic classification 55/100/21 (IEC 60068 part 1) - Special construction: therefore, extra low coupling capacity of typical 0.2 p F, high mon mode rejection - Low temperature coefficient of CTR - Rated impulse voltage (transient overvoltage) VIOTM = 10 k Vpeak - Isolation test voltage (partial discharge test voltage) Vpd = 1.6 k Vpeak - Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS - Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak - Thickness though insulation ≥ 0.75 mm - Creepage current resistance according to VDE 0303 / IEC 60112 parative tracking index: CTI ≥ 175 - Material categorization: for definitions of pliance please see .vishay./doc?99912 AGENCY APPROVALS - UL - c UL - DIN EN 60747-5-5 (VDE 0884-5) - FIMKO - CQC GB4943.1 - CQC GB8898 ORDERING INFORMATION # DIP-6 DIP-6, 400 mil PART NUMBER 7.62 mm 10.16 mm AGENCY CERTIFIED / PACKAGE UL, c UL, VDE, FIMKO DIP-4, single channel DIP-4, single channel, 400 mil Note - G = leadform 10.16 mm; G is not marked on the body CTR (%) ± 5 m A 20 to 300 TCET1600 TCET1600G Rev. 2.0,...