Datasheet Summary
End of Life
- Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1)
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Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
DESCRIPTION
TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
Features
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Peak wavelength: λp = 870 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 22°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc =...