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TSHA6500 - Infrared Emitting Diode

General Description

The TSHA6500 is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package.

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 875 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 24°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number TSHA6500
Manufacturer Vishay
File Size 113.67 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSHA6500 Datasheet

Full PDF Text Transcription for TSHA6500 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSHA6500. For precise diagrams, and layout, please refer to the original PDF.

End of Life - Last Available Purchase Date: 28-July-2023 www.vishay.com TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSH...

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rs Infrared Emitting Diode, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA6500 is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.