* Very low profile - typical height of 0.65 mm
* Ideal for automated placement Available
* Trench MOS Schottky technology
* Low forward voltage drop
* Low power loss, high efficiency
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V1PM10
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Surface mount trench mos barrier schottky rectifier.
www.vishay.com V1PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier eSMP® Series Top View Bottom View MicroSM.
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