* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
V20150SG-E3 Datasheet (210.97 KB)
V20150SG-E3
210.97 KB
High voltage trench mos barrier schottky rectifier.
V20150SG-E3, VF20150SG-E3, VB20150SG-E3, VI20150SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifie.
📁 Related Datasheet
V20150SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
