* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
V20200G
217.62 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky R.
📁 Related Datasheet
V20200C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20200C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20200G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V2000 Ambient Light Sensor and Proximity Sensor (Sensortek)
V200CH8 Metal-Oxide Varistors (Littelfuse)
V200ME01-LF VCOs (Z-Communications)
V200ME07-LF OSCILLATOR (Z-Communications)
V200ML01 VOLTAGE CONTROLLED OSCILLATOR (ETC)
V200O1-P01 TFT LCD Module (CHI MEI)
V20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
