V30120C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance
- Part: V30120C
- Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 138.97 KB
Other V30120C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier |