* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99
V30120CI Datasheet (130.26 KB)
V30120CI
130.26 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com V30120CI Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A TMBS.
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