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V30120S, VI30120S
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30120S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI30120S
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
30 A 120 V 300 A 0.
V30120S Datasheet
