V35PW12 - Trench MOS Barrier Schottky Rectifier

Features

Very low profile - typical height of 1.3 mm.
Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESIGN.

Vishay

Datasheet Details

Part number	V35PW12
Manufacturer	Vishay
File Size	114.73 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V35PW12 Datasheet
Additional preview pages of the V35PW12 datasheet.

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Full PDF Text Transcription

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www.vishay.com V35PW12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK K FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.

Published: May 4, 2020 |