V40DM120CHM3 Datasheet PDF (Dual High Voltage Trench MOS Barrier Schottky Rectifier)

V40DM120CHM3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the V40DM120CHM3, a member of the V40DM120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier family.

Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	V40DM120CHM3
Manufacturer	Vishay
File Size	119.15 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40DM120CHM3 Datasheet
Additional preview pages of the V40DM120CHM3 datasheet.

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Full PDF Text Transcription

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www.vishay.com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40DM120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 250 A 0.64 V 150 °C Package TO-263AC (SMPD) Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.

Published: Apr 6, 2016 |