* Very low profile - typical height of 0.95 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low power losses, high efficiency
* Low forward voltage drop
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Mater
V4PAN50-M3 Datasheet (131.88 KB)
V4PAN50-M3
131.88 KB
Surface mount trench mos barrier schottky rectifier.
www.vishay.com V4PAN50-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SMPATM Top View Bottom View DO-.
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