V8PAL45 - Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Very low profile - typical height of 0.95 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low power losses, high efficiency.
Low forward voltage drop.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESIGN.

V8PAL45 surface mount trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V8PAL45
Manufacturer	Vishay
File Size	130.15 KB
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V8PAL45 Datasheet

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www.vishay.com V8PAL45 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View SMPA (DO-221BC) Anode Cathode FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) 45 V 120 A 0.40 V TJ max.