V8PAM12 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V8PAM12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View SMPA (DO-221BC) Anode.

Datasheet Details

Part number	V8PAM12
Manufacturer	Vishay
File Size	122.84 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V8PAM12-Vishay.pdf

Key Features

Very low profile - typical height of 0.95 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low power losses, high efficiency.
Low forward voltage drop.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESIGN.

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