VB20120C-M3 Datasheet Dual High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VB20120C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Datasheet Details

Part number	VB20120C-M3
Manufacturer	Vishay
File Size	97.04 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120C-M3-Vishay.pdf

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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