* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VB20120SG-M3 Datasheet (94.92 KB)
VB20120SG-M3
94.92 KB
High-voltage trench mos barrier schottky rectifier.
www.vishay.com VB20120SG-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS .
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