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Vishay Intertechnology Electronic Components Datasheet

VB20150S-E3 Datasheet

High Voltage Trench MOS Barrier Schottky Rectifier

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V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20150S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF20150S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VB20150S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS
3
2
1
VI20150S
PIN 1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
20 A
150 V
160 A
0.75 V
150 °C
TO-220AB, ITO-220AB, D2PAK (TO-263AB),
TO-262AA
Circuit configuration
Single
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150S VF20150S VB20150S VI20150S UNIT
Max. repetitive peak reverse voltage
VRRM 150 V
Max. average forward rectified current (fig. 1)
IF(AV)
20 A
Peak forward surge current 8.3 ms single halfsine-wave superimposed
on rated load
IFSM
160 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
EAS
IRRM
dV/dt
VAC
TJ, TSTG
150
0.5
10 000
1500
-55 to +150
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
1 Document Number: 89059
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VB20150S-E3 Datasheet

High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Breakdown voltage
Instantaneous forward voltage (1)
Reverse current (2)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TYP
150 (min.)
0.69
0.84
1.15
0.55
0.64
0.75
2
2.5
-
5
MAX
-
-
-
1.43
-
-
0.82
-
-
250
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150S
VF20150S
Typical thermal resistance
RJC
2.0
4.0
VB20150S
2.0
VI20150S
2.0
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20150S-E3/4W
1.88
ITO-220AB
VF20150S-E3/4W
1.75
TO-263AB
VB20150S-E3/4W
1.39
TO-263AB
VB20150S-E3/8W
1.39
TO-262AA
VI20150S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
25
Resistive or Inductive Load
20
V(B,I)20150S
15 VF20150S
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
2 Document Number: 89059
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VB20150S-E3
Description High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
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