* Trench MOS Schottky technology Gen 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B10
VB30202C Datasheet (201.35 KB)
VB30202C
201.35 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com V30202C, VF30202C, VB30202C, VI30202C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
📁 Related Datasheet
VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100S-M3 High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
