* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VB60120C Datasheet (150.11 KB)
VB60120C
150.11 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = .
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