VB60170G-E3 Datasheet Dual High Voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB60170G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 170 V 210 A 0.

Datasheet Details

Part number	VB60170G-E3
Manufacturer	Vishay
File Size	99.99 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB60170G-E3-Vishay.pdf

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

VB60170G-E3 Distributor & Price

Compare VB60170G-E3 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
VB60170G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB60100C	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB60100C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB60120C	Dual High Voltage Trench MOS Barrier Schottky Rectifier