VBT10200C-E3
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT10200C
PIN 1
PIN 2
HEATSINK
VIT10200C
3 2 1
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.
Package
2 x 5.0 A 200 V 80 A 0.65 V 150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations mon cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding pound meets UL 94 V-0 flammability rating Base P/N-E3
- Ro HS-pliant, mercial grade
Terminals: Matte tin...
