• Part: VBT10202C-M3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 141.57 KB
Download VBT10202C-M3 Datasheet PDF
Vishay
VBT10202C-M3
FEATURES - Trench MOS Schottky technology generation 2 - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package) - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 1 VBT10202C PIN 1 PIN 2 HEATSINK 3 2 1 VIT10202C PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 200 V IFSM 100 A VF at IF = 5 A (TA = 125 °C) 0.65 V TJ max. Package 175 °C TO-220AB, TO-263AB, TO-262AA Diode variations mon cathode MECHANICAL DATA Case: TO-220AB, TO-263AB, and TO-262AA Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant, and mercial...