VBT1545CBP-E3 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VBT1545CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT1545CBP PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 7.5 A 45 V 100 A 0.

Datasheet Details

Part number	VBT1545CBP-E3
Manufacturer	Vishay
File Size	96.43 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	VBT1545CBP-E3-Vishay.pdf

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
TJ 200 °C max. in solar bypass mode.

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