VBT4045BP-E3 - Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VBT4045BP-E3
Manufacturer	Vishay ↗
File Size	97.84 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	VBT4045BP-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 PIN 1 PIN 2 K.

📁 VBT4045BP-E3 Similar Datasheet

VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBTA1220N - N-Channel MOSFET (VBsemi)
VBTA1220NS - N-Channel MOSFET (VBsemi)
VBTA7322 - N-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Published: May 6, 2020 |