* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VBT4045BP-E3 Datasheet (97.84 KB)
VBT4045BP-E3
97.84 KB
Trench mos barrier schottky rectifier.
www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0..
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