* TO-263AB K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2
* Compliant to RoHS Directive 2011/65/EU 1 TYPICAL APPLICATIONS PIN 1 PIN 2
VBT4045BP Datasheet (149.04 KB)
VBT4045BP
149.04 KB
Trench mos barrier schottky rectifier.
VBT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 .
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