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VBT4045BP Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
  • pliant to RoHS Directive 2011/65/EU

Other VBT4045BP Datasheets

Manufacturer Part Number Description
Vishay Siliconix Logo Vishay VBT4045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT4045BP Description

Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5.