* Power pack
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/do
VE2045C-E3 Datasheet (118.04 KB)
VE2045C-E3
118.04 KB
Dual low-voltage trench mos barrier schottky rectifier.
www.vishay.com VE2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMB.
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