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Vishay Intertechnology Electronic Components Datasheet

VEMD5510C Datasheet

Silicon PIN Photodiode

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www.vishay.com
VEMD5510C
Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
VEMD5510C is a high speed and high sensitive PIN
photodiode. It is a low profile surface-mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible light much like the human eye. The diode has its
peak sensitivity at 550 nm and a low capacitance.
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• Suppression filter for near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to
J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Wearables
• Optical heart rate monitoring
• Ambient light sensors
PRODUCT SUMMARY
COMPONENT
VEMD5510C
Note
• Test conditions see table “Basic Characteristics”
Ira (μA)
0.6
ϕ (deg)
± 65
λ0.5 (nm)
440 to 700
ORDERING INFORMATION
ORDERING CODE
VEMD5510C
VEMD5510C-GS15
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 5000 pcs, 5000 pcs/reel
PACKAGE FORM
Top view
Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
ESD safety HBM
Tamb 25 °C
According to reflow solder profile Fig. 8
± 2000 V, 1.5 kΩ, 100 pF, 3 pulses
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
ESDHBM
VALUE
20
215
110
-40 to +100
-40 to +100
260
350
2
UNIT
V
mW
°C
°C
°C
°C
K/W
kV
Rev. 1.0, 22-Jun-17
1 Document Number: 84354
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VEMD5510C Datasheet

Silicon PIN Photodiode

No Preview Available !

www.vishay.com
VEMD5510C
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Reverse light current
Angle of half sensitivity
IF = 50 mA
IR = 100 μA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
EV = 100 lx, CIE illuminant A
EV = 100 lx, CIE illuminant A
EV = 100 lx, CIE illuminant A
Ee = 0.2 mW/cm2, λ = 525 nm, VR = 5 V
EV = 100 lx, CIE illuminant A, VR = 5 V
VF
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
Ira
Ira
ϕ
-
20
-
-
-
-
-
-
2.0
0.46
-
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
λp
λ0.5
tr
tf
-
-
-
-
TYP.
0.9
-
0.2
80
30
240
-2.5
0.6
2.6
0.55
± 65
550
440 to 700
70
70
MAX.
1.3
-
10
-
40
-
-
-
-
-
-
-
-
-
-
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
μA
μA
deg
nm
nm
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
1000
100
VR = 10 V
10
1
10
VR = 5 V, CIE illuminant A
1
0.1
0.1
0
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
0.01
10
100
EV - Illuminance (lx)
1000
Fig. 2 - Reverse Light Current vs. Irradiance
Rev. 1.0, 22-Jun-17
2 Document Number: 84354
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VEMD5510C
Description Silicon PIN Photodiode
Maker Vishay
Total Page 7 Pages
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