logo

VFT3045BP Datasheet, Vishay

VFT3045BP rectifier equivalent, trench mos barrier schottky rectifier.

VFT3045BP Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 141.04KB)

VFT3045BP Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per .

Application

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MEC.

Image gallery

VFT3045BP Page 1 VFT3045BP Page 2 VFT3045BP Page 3

TAGS

VFT3045BP
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts