* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MEC.

VFT3045C

VFT3045CBP

VFT30-28

VFT30-50

VFT300-28

VFT300-50

VFT3060C

VFT3060C-E3

VFT3060G

VFT3060G-E3

VFT3080C

VFT3080C-E3

VFT3080S

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