* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLI
VI10150C Datasheet (132.76 KB)
VI10150C
132.76 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V10150C, VI10150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 .
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