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VI20100S-E3 Datasheet High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VI20100S-E3
Manufacturer Vishay
File Size 200.83 KB
Description High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI20100S-E3 Datasheet

Overview

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100S 123 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100S NC K A HEATSINK DESIGN SUPPORT TOOLS VI20100S PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.

Package 20 A 100 V 250 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).

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