* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VI20120C Datasheet (130.88 KB)
VI20120C
130.88 KB
Dual high-voltage trench mos barrier schottky rectifier.
New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF.
📁 Related Datasheet
VI20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI20100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
