VI20120S Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s
- Material categorization: for definitions of pliance
- Part: VI20120S
- Description: High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 130.21 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VI20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120SG-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |