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V20120SG, VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
3 2 1
V20120SG
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI20120SG
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM VF at IF = 20 A
150 A 0.78 V
TJ max.
VI20120SG Datasheet
