VI20120SG Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s
- Material categorization: for definitions of pliance
- Part: VI20120SG
- Manufacturer: Vishay (official site)
- Size: 134.93 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VI20120SG-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120S | High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI20120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
VI20120SG Description
.vishay. V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20120SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120SG PIN 1 PIN 2 PIN.