VI20200G-E3 Datasheet Dual High Voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200G 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20200G 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20200G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20200G 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 200 V 110 A 0.

Datasheet Details

Part number	VI20200G-E3
Manufacturer	Vishay
File Size	209.15 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI20200G-E3-Vishay.pdf

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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