* Trench MOS Schottky technology Gen 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B10
VI30202C Datasheet (201.35 KB)
VI30202C
201.35 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com V30202C, VF30202C, VB30202C, VI30202C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
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