* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions o
VI40100C Datasheet (136.87 KB)
VI40100C
136.87 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = .
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