* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT2060G PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2060G PIN 1 PIN 3 2 3 1
VIT2060G Datasheet (188.03 KB)
VIT2060G
188.03 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VT2060G, VIT2060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF.
📁 Related Datasheet
VIT2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2080S Trench MOS Barrier Schottky Rectifier (Vishay)
