* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VIT2080S-E3 Datasheet (197.32 KB)
VIT2080S-E3
197.32 KB
Trench mos barrier schottky rectifier.
VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = .
📁 Related Datasheet
VIT2080S Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
