* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT3080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT3080C PIN 1 PIN 3 2 3 1
VIT3080C Datasheet (188.51 KB)
VIT3080C
188.51 KB
Dual trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VT3080C, VIT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at .
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