* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT30L60C PIN 1 PIN 3 PIN
VIT30L60C Datasheet (187.16 KB)
VIT30L60C
187.16 KB
Dual trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V a.
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