VOS617A Description
The VOS617A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package.
VOS617A Key Features
- High CTR with low input current
- Low profile package (half pitch)
- High collector emitter voltage, VCEO = 80 V
- Isolation test voltage = 3750 VRMS
- Low coupling capacitance
- High mon mode transient immunity
- Material categorization