Datasheet Summary
.vishay.
VS-10TQ035S-M3, VS-10TQ045S-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base cathode
2 1
3 D2PAK (TO-263AB)
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM max. TJ max. EAS Package
10 A 35 V, 45 V
0.49 V 15 mA at 125 °C
175 °C 13 mJ D2PAK (TO-263AB)
Circuit configuration
Single
Features
- 175 °C TJ operation
- Low forward voltage drop
- High frequency operation
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for enhanced ruggedness and long term reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Designed and qualified according...