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Vishay Intertechnology Electronic Components Datasheet

VS-16TTS12STRL-M3 Datasheet

Thyristor High Voltage / Surface Mount Phase Control SCR

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www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
2
Anode
2
3
1
TO-263AB (D2PAK)
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
TO-263AB (D2PAK)
Single SCR
10 A
800 V, 1200 V
1.4 V
60 mA
- 40 °C to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and
JEDEC®-JESD47
qualified
according
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-16TTS..S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
Aluminum IMS, RthCA = 15 °C/W
6.3
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
THREE-PHASE BRIDGE
3.5
9.5
18.5
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
10 A, TJ = 25 °C
dI/dt
TJ
VALUES
10
16
800/1200
200
1.4
500
150
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08S-M3
VS-16TTS12S-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
IRRM/IDRM
AT 125 °C
mA
10
Revision: 27-Jan-14
1 Document Number: 94893
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-16TTS12STRL-M3 Datasheet

Thyristor High Voltage / Surface Mount Phase Control SCR

No Preview Available !

www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I2t
VTM
rt
VT(TO)
Maximum reverse and direct leakage current IRM/IDM
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
IH
IL
dV/dt
dI/dt
TC = 98 °C, 180° conduction, half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
10 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
Anode supply = 6 V, resistive load,TJ = 25 °C
TJ = TJ max. linear to 80 % VDRM = Rg - k = Open
VALUES
UNITS
TYP. MAX.
10
16
A
170
200
144
A2s
200
2000
A2s
1.4 V
24.0 m
1.1 V
0.5
10
- 150
mA
200
500 V/μs
150 A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate voltage to trigger
VGT
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
UNITS
μs
Revision: 27-Jan-14
2 Document Number: 94893
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-16TTS12STRL-M3
Description Thyristor High Voltage / Surface Mount Phase Control SCR
Maker Vishay
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