900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

VS-19TQ015SPbF Datasheet

High Performance Schottky Rectifier

No Preview Available !

www.vishay.com
VS-19TQ015SPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 19 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
D2PAK
19 A
15 V
0.36 V
522 mA at 100 °C
125 °C
Single die
6.75 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015SPbF Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
19 Apk, TJ = 75 °C
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VALUES
19
15
700
0.32
-55 to +125
VS-19TQ015SPbF
15
UNITS
A
V
A
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 80 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25 °C, IAS = 1.50 A, L = 6 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 3 x VR typical
VALUES
19
700
330
6.75
1.50
UNITS
A
A
mJ
A
Revision: 28-May-14
1 Document Number: 94152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-19TQ015SPbF Datasheet

High Performance Schottky Rectifier

No Preview Available !

www.vishay.com
VS-19TQ015SPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
19 A
38 A
TJ = 25 °C
19 A
38 A
TJ = 75 °C
TJ = 100 °C, VR = 12 V
TJ = 100 °C, VR = 5 V
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.36
0.46
0.32
0.43
465
285
10.5
522
2000
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
See fig. 4
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D2PAK
VALUES
-55 to +125
-55 to +150
UNITS
°C
1.50
°C/W
0.50
2g
0.07 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
19TQ015S
1000
100
TJ = 100 °C
10 TJ = 75 °C
TJ = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
1
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
0
5 10 15
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 28-May-14
2 Document Number: 94152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-19TQ015SPbF
Description High Performance Schottky Rectifier
Maker Vishay
Total Page 7 Pages
PDF Download

VS-19TQ015SPbF Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 VS-19TQ015SPbF High Performance Schottky Rectifier
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy